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35
DIM800DDM17-A000
Replaces DS5433-4.1 July 2002
11.5
0.2
Dual Switch IGBT Module
DS5433-5 June 2009 (LN26751)
FEATURES
0.2
10s 18 0.2 Short Circuit Withstand High Thermal Cycling Capability 44 0.2 Non Punch Through Silicon 57 0.2 Isolated AlSiC Base with AlN Substrates Lead Free construction
6 x O7
KEY PARAMETERS VCES VCE(sat) * (typ) IC (max) IC(PK) (max)
14
0.2
28
0.5
1700V 2.7 V screwing depth 800A 8 max 1600A
* Measured at the power busbars, not the auxiliary terminals
55.2 0.3 11.85 0.2 APPLICATIONS

1(E) 5(E) 6(G)
2(C) 12(C) 11(G)
High Reliability Inverters Motor Controllers Traction Drives
The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A. The DIM800DDM17-A000 is a dual switch 1700V, nchannel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10s short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
7(C) 3(C) 4(E)
10(E)
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM800DDM17-A000
Note: When ordering, please use the complete part number Outline type code: D (See Fig. 11 for further information) Fig. 2 Package
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DIM800DDM17-A000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under `Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax It Visol QPD
2
Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Diode I t value Isolation voltage - per module Partial discharge - per module
2
Test Conditions VGE = 0V
Max. 1700 20
Units V V A A W kA s V pC
2
Tcase = 75C 1ms, Tcase = 110C Tcase = 25C, Tj = 150C VR = 0, tp = 10ms, Tj = 125C Commoned terminals to base plate. AC RMS, 1 min, 50Hz IEC1287, V1 = 1800V, V2 = 1300V, 50Hz RMS
800 1600 6940 120 4000 10
THERMAL AND MECHANICAL RATINGS
Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Comparative Tracking Index): AlN AlSiC 20mm 10mm 350
Symbol Rth(j-c) Rth(j-c) Rth(c-h) Tj Tstg
Parameter Thermal resistance - transistor (per switch) Thermal resistance - diode (per switch) Thermal resistance - case to heatsink (per module) Junction temperature Diode Storage temperature range
Test Conditions Continuous dissipation junction to case Continuous dissipation junction to case Mounting torque 5Nm (with mounting grease) Transistor
Min
Typ. -
Max 18 40 8 150 125 125 5 2 10
Units C/kW C/kW C/kW C C C Nm Nm Nm
-40 -
-
Mounting - M6 Screw torque Electrical connections - M4 Electrical connections - M8
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM800DDM17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise. Symbol ICES IGES VGE(TH) VCE(sat) IF IFM VF

Parameter Collector cut-off current
Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125C
Min
Typ
Max 1 25 4
Units mA mA A V V V A A V V nF C nF nH A
Gate leakage current Gate threshold voltage Collector-emitter saturation voltage Diode forward current Diode maximum forward current Diode forward voltage
VGE = 20V, VCE = 0V IC = 40mA, VGE = VCE VGE = 15V, IC = 800A VGE = 15V, IC = 800A, Tj = 125C DC tp = 1ms IF = 800A IF = 800A, Tj = 125C 2.2 2.3 60 9 20 270 I1 3700 4.5 5.5 2.7 3.4
6.5 3.2 4.0 800 1600 2.5 2.6
Cies Qg Cres LM RINT
Input capacitance Gate charge Reverse transfer capacitance Module inductance - per switch Internal transistor resistance - per switch
VCE = 25V, VGE = 0V, f = 1MHz 15V VCE = 25V, VGE = 0V, f = 1MHz Tj = 125C, VCC = 1000V
SCData
Short circuit current, ISC
tp 10s, VGE 15V VCE (max) = VCES - L x dI/dt IEC 60747-9
*
I2
3200
A
Note: Measured at the power busbars, not the auxiliary terminals * L is the circuit inductance + LM
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DIM800DDM17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr Erec Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse recovery current Diode reverse recovery energy IF = 800A VCE = 900V dIF/dt = 4000A/s Test Conditions IC = 800A VGE = 15V VCE = 900V RG(ON) = 2.2 RG(OFF) = 2.2 LS ~ 100nH 220 200 460 130 mJ C A mJ Min Typ. 1250 170 230 250 250 Max Units ns ns mJ ns ns
Tcase = 125C unless stated otherwise
Symbol
Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse recovery current Diode reverse recovery energy
Test Conditions IC = 800A VGE = 15V VCE = 900V RG(ON) = 2.2 RG(OFF) = 2.2 LS ~ 100nH
Min
Typ. 1500 200 360 400 250 340
Max
Units ns ns mJ ns ns mJ C A mJ
td(off) tf EOFF td(on) tr EON Qrr Irr Erec
IF = 800A VCE = 900V dIF/dt = 4000A/s
330 530 200
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM800DDM17-A000
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DIM800DDM17-A000
Fig. 7 Diode typical forward characteristics
Fig. 8 Reverse bias safe operating area
Fig. 9 Diode reverse bias safe operating area
Fig. 10 Transient thermal impedance
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM800DDM17-A000
PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
1300.5 114 0.1 4 x M8 57 0.25 57 0.25 29.2 0.5 screwing depth max 16
140 0.5 124 0.25 30 0.2
11.5 0.2
6 x M4 16 0.2 18 0.2 40 0.2 53 0.2 44 0.2 57 0.2 6 x O7
35 0.2 14 0.2
5.250.3
screwing depth max 8
55.2 0.3 11.85 0.2
1(E) 5(E) 6(G)
2(C) 12(C) 11(G)
+1.5 -0.0
5 0.2
38
7(C) 3(C) 4(E)
10(E)
Nominal Weight:
900g D
Module Outline Type Code:
Fig. 11 Module outline drawing
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DIM800DDM17-A000 HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF, United Kingdom Fax: Tel: +44(0)1522 500550 +44(0)1522 500500
CUSTOMER SERVICE
DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF, United Kingdom Fax: Tel: email: +44(0)1522 500020 +44(0)1522 502901 / 502753 power_solutions@dynexsemi.com
Dynex Semiconductor TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM.
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product status. The annotations are as follows:Target Information: Preliminary Information: Advance Information: No Annotation: This is the most tentative form of information and represents a very preliminary specification. No actual work on the product has been started. The product is in design and development. The datasheet represents the product as it is understood but may change. The product design is complete and final characterisation for volume production is well in hand. The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the company in writing) may not be used, appli ed or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee expressed or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the users responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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